Phase Identification and AES Depth Profile Analysis of Cu(In,Ga)Se2 Thin Films
نویسندگان
چکیده
E. Romero2, C. Calderón1, P. Bartolo-Pérez3,4, F. Mesa1, and G. Gordillo1 1Departamento de Fı́sica, Universidad Nacional de Colombia, Bogotá, Colombia 2Departamento de Quı́mica, Universidad Nacional de Colombia, Bogotá, Colombia 3Departamento de Fı́sica Aplicada, Centro de Investigación y de Estudios Avanzados del IPN, Mérida, Yuc., México, 4Estancia sabática: Programa de Corrosión del Golfo de México, Universidad Autónoma de Campeche
منابع مشابه
Fabrication Of Cu(In,Ga)Se2 Solar Cells With In2S3 Buffer Layer By Two Stage Process
Cu(In,Ga)Se2 thin films (CIGS) on metallic substrate (titanium, molybdenum, aluminum, stainless steel) were prepared by a two-step selenization of Co-evaporated metallic precursors in Se-containing environment under N2 gas flow. Structural properties of prepared thin film were studied. To characterize the optical quality and intrinsic defect nature low-temperature photoluminescence, were perfor...
متن کاملGrazing-incidence X-ray fluorescence analysis for non-destructive determination of In and Ga depth profiles in Cu(In,Ga)Se2 absorber films
Development of highly efficient thin film solar cells involves band gap engineering by tuning their elemental composition with depth. Here we show that grazing incidence X-ray fluorescence (GIXRF) analysis using monochromatic synchrotron radiation and well-characterized instrumentation is suitable for a non-destructive and reference-free analysis of compositional depth profiles in thin films. V...
متن کاملMeasurement of Atomic Fractions in Cu(In,Ga)Se2 Films by Auger Electron Spectroscopy (AES) and Energy Dispersive Electron Probe Microanalysis (ED-EPMA)
A pilot study (PS) has been performed under the Consultative Committee for Amount of Substance (CCQM) / Surface Analysis Working Group (SAWG) with the objective to compare the atomic fractions of Cu, In, Ga and Se in CIGS alloy films. Four polycrystalline CIGS films with different atomic fractions were fabricated by variation of the relative atomic fraction of Ga on 100 mm x 100 mm soda-lime gl...
متن کاملEffect of Annealing on Physical Properties of Cu2ZnSnS4 (CZTS) Thin Films for Solar Cell Applications
Cu2ZnSnS4 (CZTS) thin films were prepared by directly sputteringCu (In,Ga)Se2 quaternary target consisting of (Cu: 25%, Zn: 12.5%, Sn; 12.5%and S: 50%). The composition and structure of CZTS layers have beeninvestigated after annealing at 200 0C, 350 0C and 500 0C under vacuum. Theresults show that recrystallization of the CZTS thin film occurs and increasingthe grain size with a preferred orie...
متن کاملInterface reactions and Kirkendall voids in metal organic vapor-phase epitaxy grown Cu„In,Ga...Se2 thin films on GaAs
Cu In1−xGax Se2 CIGS films were grown on 001 GaAs at 570 or 500 °C by means of metal organic vapor-phase epitaxy. All films were Cu-rich Cu/ In+Ga 1 with pseudomorphic Cu2Se second phase particles found only on the growth surface. During growth, diffusion of Ga from the substrate and vacancies generated by the formation of CIGS from Cu2Se at the surface occurred. The diffusion processes lead to...
متن کامل